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APT7F120B Datasheet(PDF) 2 Page - Microsemi Corporation |
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APT7F120B Datasheet(HTML) 2 Page - Microsemi Corporation |
2 / 4 page Static Characteristics TJ = 25°C unless otherwise specified Source-Drain Diode Characteristics Dynamic Characteristics TJ = 25°C unless otherwise specified APT7F120B_S 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at T J = 25°C, L = 127.78mH, RG = 4.7Ω, IAS = 3A. 3 Pulse test: Pulse Width < 380µs, duty cycle < 2%. 4 C o(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 C o(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of V DS less than V(BR)DSS, use this equation: Co(er) = -1.17E-7/VDS^2 + 1.42E-8/VDS + 2.01E-11. 6 R G is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein. G D S Unit V V/°C Ω V mV/°C µA nA Unit S pF nC ns Unit A V ns µC A V/ns Min Typ Max 1200 1.41 2.07 2.90 3 4 5 -10 250 1000 ±100 Min Typ Max 8 2565 31 190 75 38 80 13 37 14 8 45 13 Min Typ Max 7 28 1.0 190 325 0.64 1.45 7.5 10.7 25 Test Conditions V GS = 0V, ID = 250µA Reference to 25°C, I D = 250µA V GS = 10V, ID = 3A V GS = VDS, ID = 1mA V DS = 1200V T J = 25°C V GS = 0V T J = 125°C V GS = ±30V Test Conditions V DS = 50V, ID = 3A V GS = 0V, VDS = 25V f = 1MHz V GS = 0V, VDS = 0V to 800V V GS = 0 to 10V, ID = 3A, V DS = 600V Resistive Switching V DD = 800V, ID = 3A R G = 4.7Ω 6 , V GG = 15V Test Conditions MOSFET symbol showing the integral reverse p-n junction diode (body diode) I SD = 3A, TJ = 25°C, VGS = 0V T J = 25°C T J = 125°C I SD = 3A 3 T J = 25°C di SD/dt = 100A/µs T J = 125°C V DD = 100V T J = 25°C T J = 125°C I SD ≤ 3A, di/dt ≤1000A/µs, VDD = 800V, T J = 125°C Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source On Resistance 3 Gate-Source Threshold Voltage Threshold Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Source Leakage Current Parameter Forward Transconductance Input Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance, Charge Related Effective Output Capacitance, Energy Related Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Peak Recovery dv/dt Symbol V BR(DSS) ∆V BR(DSS)/∆TJ R DS(on) V GS(th) ∆V GS(th)/∆TJ I DSS I GSS Symbol g fs C iss C rss C oss C o(cr) 4 C o(er) 5 Q g Q gs Q gd t d(on) t r t d(off) t f Symbol I S I SM V SD t rr Q rr I rrm dv/dt |
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