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ISPLSI1032E125LTN Datasheet(PDF) 3 Page - Lattice Semiconductor |
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ISPLSI1032E125LTN Datasheet(HTML) 3 Page - Lattice Semiconductor |
3 / 17 page 3 Specifications ispLSI 1032E Absolute Maximum Ratings 1 Supply Voltage Vcc ...................................-0.5 to +7.0V Input Voltage Applied ........................ -2.5 to VCC +1.0V Off-State Output Voltage Applied ..... -2.5 to VCC +1.0V Storage Temperature ................................ -65 to 150°C Case Temp. with Power Applied .............. -55 to 125°C Max. Junction Temp. (TJ) with Power Applied ... 150°C 1. Stresses above those listed under the “Absolute Maximum Ratings” may cause permanent damage to the device. Functional operation of the device at these or at any other conditions above those indicated in the operational sections of this specification is not implied (while programming, follow the programming specifications). DC Recommended Operating Conditions TA = 0°C to + 70°C TA = -40°C to + 85°C SYMBOL Table 2-0005/1032E VCC VIH VIL PARAMETER Supply Voltage Input High Voltage Input Low Voltage MIN. MAX. UNITS 4.75 4.5 2.0 0 5.25 5.5 Vcc+1 0.8 V V V V Commercial Industrial Capacitance (T A=25 oC, f=1.0 MHz) Data Retention Specifications Table 2-0008/1032E PARAMETER Data Retention MINIMUM MAXIMUM UNITS Erase/Reprogram Cycles 20 10000 – – Years Cycles C SYMBOL Table 2-0006/1032E C PARAMETER Y0 Clock Capacitance 15 UNITS TYPICAL TEST CONDITIONS 1 2 8 Dedicated Input, I/O, Y1, Y2, Y3, Clock Capacitance (Commercial/Industrial) pf pf V = 5.0V, V = 2.0V V = 5.0V, V = 2.0V CC CC PIN PIN |
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