XP135A1145SR_1 datasheet(2/8 Pages) TOREX

Part #	XP135A1145SR

Description	Power MOSFET

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Manufacturer	TOREX [Torex Semiconductor]

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XP135A1145SR

PARAMETER

SYMBOL

CONDITIONS

MIN.

TYP.

MAX.

UNITS

Drain Cut-Off Current

Idss

Vds= 30V, Vgs= 0V

-

10

μ

A

Gate-Source Leak Current

Igss

Vgs=±20V, Vds= 0V

-

±

1

μ

A

Gate-Source Cut-Off Voltage

Vgs(off)

Id= 1mA, Vds= 10V

1.0

-

2.5

V

Id= 3A, Vgs= 10V

-

0.026

0.033

Ω

Drain-Source On-State Resistance *1

Rds(on)

Id= 3A, Vgs= 4.5V

-

0.035

0.045

Ω

Forward Transfer Admittance *1

| Yfs |

Id= 3A, Vds= 10V

-

12

-

S

Body Drain Diode

Forward Voltage

Vf

If= 6A, Vgs= 0V

-

0.85

1.1

V

PARAMETER

SYMBOL

CONDITIONS

MIN.

TYP.

MAX.

UNITS

Thermal Resistance

(Channel-Ambience)

Rth (ch-a)

Implement on a glass epoxy

resin PCB

-

62.5

-

℃

/W

PARAMETER

SYMBOL

CONDITIONS

MIN.

TYP.

MAX.

UNITS

Input Capacitance

Ciss

-

620

-

pF

Output Capacitance

Coss

-

350

-

pF

Feedback Capacitance

Crss

Vds= 10V, Vgs=0V

f= 1MHz

-

120

-

pF

PARAMETER

SYMBOL

CONDITIONS

MIN.

TYP.

MAX.

UNITS

Turn-On Delay Time

td (on)

-

15

-

ns

Rise Time

tr

-

20

-

ns

Turn-Off Delay Time

td (off)

-

30

-

ns

Fall Time

tf

Vgs= 5V, Id= 3A

Vdd= 10V

-

10

-

ns

■

ELECTRICAL CHARACTERISTICS

DC Characteristics (N-channel Power MOSFET)

Ta = 25℃

*1 Effective during pulse test.

Ta = 25℃

Switching Characteristics

Thermal Characteristics

Dynamic Characteristics

Ta = 25℃

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