AMIS-42670 High-Speed CAN Transceiver

Data Sheet

For Long Networks

8.0 Electrical Characteristics

8.1 Definitions

All voltages are referenced to GND (pin 2). Positive currents flow into the IC. Sinking current means the current is flowing into the pin;

sourcing current means the current is flowing out of the pin.

8.2 Absolute Maximum Ratings

Stresses above those listed in the following table may cause permanent device failure. Exposure to absolute maximum ratings for

extended periods may affect device reliability.

Table 4: Absolute Maximum Ratings

Symbol

Parameter

Conditions

Min.

Max.

Unit

Supply voltage

-0.3

+7

V

DC voltage at pin CANH

-45

+45

V

DC voltage at pin CANL

-45

+45

V

DC voltage at pin TxD

-0.3

V

DC voltage at pin RxD

-0.3

V

DC voltage at pin S

-0.3

V

-0.3

V

Transient voltage at pin CANH

Note 1

-150

+150

V

Transient voltage at pin CANL

Note 1

-150

+150

V

Electrostatic discharge voltage at all pins

Note 2

Note 4

-4

-750

+4

+750

kV

V

Latch-up

Static latch-up at all pins

Note 3

100

mA

Storage temperature

-55

+155

°C

Ambient temperature

-40

+125

°C

Maximum junction temperature

-40

+150

°C

Notes:

1.

Applied transient waveforms in accordance with ISO 7637 part 3, test pulses 1, 2, 3a, and 3b (see Figure 4).

2.

Standardized human body model ESD pulses in accordance to MIL883 method 3015.7.

3.

Static latch-up immunity: static latch-up protection level when tested according to EIA/JESD78.

4.

Standardized charged device model ESD pulses when tested according to EOS/ESD DS5.3-1993.

8.3 Thermal Characteristics

Table 5: Thermal Characteristics

Symbol

Parameter

Conditions

Value

Unit

Thermal resistance from junction to ambient in SO8 package

In free air

150

K/W

Thermal resistance from junction to substrate of bare die

In free air

45

K/W

5

AMI Semiconductor

– October 07, Rev. 1.0