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 STMICROELECTRONICS
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STP20NM50FD/STB20NM50FD-1 2/9 ABSOLUTE MAXIMUM RATINGS ( ) Pulse width limited by safe operating area (1) ISD ≤ 20A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX. THERMAL DATA AVALANCHE CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) ON/OFF Symbol Parameter Value Unit VDS Drain-source Voltage (VGS =0) 500 V VDGR Drain-gate Voltage (RGS =20kΩ) 500 V VGS Gate- source Voltage ±30 V ID Drain Current (continuous) at TC = 25°C 20 A ID Drain Current (continuous) at TC = 100°C 14 A IDM ( ) Drain Current (pulsed) 80 A PTOT Total Dissipation at TC = 25°C 192 W Derating Factor 1.2 W/°C dv/dt (1) Peak Diode Recovery voltage slope 20 V/ns Tstg Storage Temperature –65 to 150 °C Tj Max. Operating Junction Temperature 150 °C Rthj-case Thermal Resistance Junction-case Max 0.65 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Tl Maximum Lead Temperature For Soldering Purpose 300 °C Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 10 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID =IAR,VDD =35 V) 700 mJ Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS =0 500 V IDSS Zero Gate Voltage Drain Current (VGS =0) VDS = Max Rating 1µA VDS = Max Rating, TC = 125 °C 10 µA IGSS Gate-body Leakage Current (VDS =0) VGS = ±30V ±100 nA VGS(th Gate Threshold Voltage VDS =VGS,ID = 250 µA 34 5V RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 10A 0.22 0.25 Ω |
