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T850H-6G-TR Datasheet(PDF) 5 Page - STMicroelectronics |
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T850H-6G-TR Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 10 page T835H, T850H Characteristics 5/10 Figure 9. Relative variation of critical rate of decrease of main current (dI/dt)c versus reapplied (dV/dt)c (typical values) Figure 10. Relative variation of critical rate of decrease of main current versus junction temperature Figure 11. Leakage current versus junction temperature for different values of blocking voltage (typical values) Figure 12. Variation of thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness = 35 µm) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.1 1.0 10.0 100.0 (dI/dt) c [(dV/dt) c ] / Specified (dI/dt)c (dV/dt)C (V/µs) 0 1 2 3 4 5 6 7 8 25 50 75 100 125 150 (dI/dt) c [Tj] / (dI/dt)c [Tj=150°C] Tj(°C) 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 1.0E+04 25 50 75 100 125 150 I DRM/IRRM(µA) V DRM=VRRM=400 V V DRM=VRRM=400 V V DRM=VRRM=600 V V DRM=VRRM=600 V V DRM=VRRM=200 V V DRM=VRRM=200 V Tj(°C) 0 10 20 30 40 50 60 70 80 0 5 10 15 20 25 30 35 40 R th(j-a)(°C/W) D²PAK SCU(cm²) |
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