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T850H-6G-TR Datasheet(PDF) 3 Page - STMicroelectronics |
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T850H-6G-TR Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 10 page T835H, T850H Characteristics 3/10 Table 3. Static Characteristics Symbol Test Conditions Value Unit VT (1) ITM = 11 A, tp = 380 µs Tj = 25° C MAX. 1.5 V Vt0 (1) Threshold voltage Tj = 150° C MAX. 0.80 V Rd (1) Dynamic resistance Tj = 150° C MAX. 52 m Ω IDRM IRRM (2) VDRM = VRRM Tj = 25° C MAX. 5 µA Tj = 150° C MAX. 3.1 mA VD/VR = 400 V (at peak mains voltage) Tj = 150° C MAX. 2.5 VD/VR = 200 V (at peak mains voltage) Tj = 150° C MAX. 2.0 1. for both polarities of A2 referenced to A1. 2. tp = 380 µs. Table 4. Thermal resistance Symbol Parameter Value Unit Rth(j-c) Junction to case (AC) D2PAK / TO-220AB 1.85 ° C/W TO-220AB Ins 3.7 Rth(j-a) Junction to ambient S = 1 cm2 D2PAK 45 TO-220AB / TO-220AB Ins 60 Figure 1. Maximum power dissipation versus RMS on-state current (full cycle) Figure 2. RMS on-state current versus case temperature (full cycle) 0 1 2 3 4 5 6 7 8 9 10 012345678 P(W) α=180 ° 180° IT(RMS)(A) 0 1 2 3 4 5 6 7 8 9 0 25 50 75 100 125 150 I T(RMS) (A) TO-220AB Insulated TO-220AB/D²PAK TC(°C) |
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