ESDAULC6-3BP6 datasheet(4/11 Pages) STMICROELECTRONICS

Part #	ESDAULC6-3BP6

Description	ESD protection for high speed interface

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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Characteristics

ESDAULC6-3BP6, ESDAULC6-3BF2

4/11

Figure 9.

Junction capacitance versus

reverse voltage applied (typical

values) (SOT-666)

Figure 10.

Junction capacitance versus

reverse voltage applied (typical

values) (Flip-Chip)

0

1

012

3

45

C(pF)

F=1MHz

V

=30mV

T =25°C

OSC

RMS

j

V

(V)

LINE

0

1

2

012

345

C(pF)

F=1MHz

V

OSC=30mVRMS

T

j=25°C

VLINE(V)

Figure 11.

Relative variation of leakage

current versus junction

temperature (typical values)

(SOT-666)

Figure 12.

Relative variation of leakage

current versus junction

temperature (typical values)

(Flip-Chip)

1

10

100

25

50

75

100

125

150

V =5V

R

I [T ] / I [T =25°C]

Rj

T (°C)

j

1

10

100

25

50

75

100

125

I

R [Tj]/IR [Tj=25°C]

V

R =5V

Tj(°C)

Figure 13.

Remaining voltage after

ESDAULC6-3BP6 during ESD

15 kV positive surge (air

discharge) (SOT-666)

Figure 14.

Remaining voltage after

ESDAULC6-3BF2 during ESD

15 kV positive surge (air

discharge) (Flip-Chip)

0.1 µs/div

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ESDAULC6-3BP6 Datasheet(PDF) 4 Page - STMicroelectronics

ESDAULC6-3BP6 Datasheet(HTML) 4 Page - STMicroelectronics

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