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ESDALC6V1C2 Datasheet(PDF) 3 Page - STMicroelectronics |
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ESDALC6V1C2 Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 7 page ESDALC6V1C2 Characteristics 3/7 Figure 1. Peak power dissipation versus initial junction temperature Figure 2. Peak pulse power versus exponential pulse duration (Tj initial = 25°C) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 25 50 75 100 125 150 P PP[T j initial] / PPP [T j initial=25°C] Tj(°C) 10 100 1000 1 10 100 PPP(W) tP(µs) Figure 3. Clamping voltage versus peak pulse current (Tj initial = 25°C), rectangular waveform tp = 2.5 µs). Figure 4. Capacitance versus reverse applied voltage (typical values) Figure 5. Relative variation of the leakage current versus junction temperature (typical values) 0.1 1.0 10.0 100.0 0 5 10 15 20 25 30 35 40 45 50 IPP(A) VCL(V) 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 01 2 3 456 C(pF) VR(V) 1.E+00 1.E+01 1.E+02 1.E+03 1.E+04 25 50 75 100 125 I R [Tj]/IR [Tj=25°C] Tj(°C) |
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