AIS326DQ datasheet(11/49 Pages) STMICROELECTRONICS

Part #	AIS326DQ

Description	MEMS inertial sensor 3-axis, low g accelerometer with digital output

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AIS326DQ

Mechanical and electrical specifications

11/49

CrAx

Cross axis(4)

-5

5

%

Vst

Self-test output change(7),(8)

Full-scale= ±2

g

X axis

110

210

310

LSb

Full-scale= ±2

g

Y axis

110

210

310

Full-scale= ±2

g

Z axis

70

160

250

Full-scale= ±6

g

X axis

30

70

120

LSb

Full-scale= ±6

g

Y axis

30

70

120

Full-scale= ±6

g

Z axis

20

55

110

BW

System bandwidth(9)

ODRx/4

Hz

TOP

Operating temperature range

-40

+105

°C

Wh

Product weight

0.2

gram

1.

The product is factory calibrated at 3.3 V. Operation over 3.6 V is not recommended

2.

Typical specifications are not guaranteed

3.

Verified by wafer level test and specification of initial offset and sensitivity

4.

Guaranteed by design

5.

Zero-g level offset value after MSL3 preconditioning

6.

Offset can be eliminated by enabling the built-in high pass filter (HPF)

7.

Self test output changes with the power supply. “Self-test output change” is defined as OUTPUT[LSb](Self-test bit on

CTRL_REG1=1) - OUTPUT[LSb](Self-test bit on CTRL_REG1=0). 1LSb = 1g/1024 at 12 bit representation, 2 g Full-scale

8.

Output data reach 99% of final value after 5/ODR when enabling Self-test mode due to device filtering

9.

ODRx is output data rate. Refer to

Table 4 for specifications

Table 3.

Mechanical characteristics @ Vdd = 3.3 V, T = -40 °C to 105 °C unless otherwise

noted(1) (continued)

Symbol

Parameter

Test conditions

Min.

Typ.(2)

Max.

Unit

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