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VN808TR-32-E Datasheet(PDF) 3 Page - STMicroelectronics |
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VN808TR-32-E Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 18 page VN808-32-E Maximum ratings 3/18 1 Maximum ratings Table 1. Absolute maximum rating Symbol Parameter Value Unit VCC DC supply voltage 45 V -IGND DC ground pin reverse current TRAN Ground pin reverse current (pulse duration < 1ms) -250 -6 mA A IOUT DC output current Internally limited A -IOUT Reverse DC output current -2 A IIN DC Input current ± 10 mA VIN Input voltage range -3/+VCC V VESD Electrostatic discharge (R = 1.5 k Ω; C = 100 pF) 2000 V PTOT Power dissipation at Tc = 25 °C 96 W LMAX Max inductive load (VCC = 24 V, RLOAD = 48 Ω, TA = 100 °C) 2H TJ Junction operating temperature Internally limited °C TC Case operating temperature Internally limited °C TSTG Storage temperature -40 to 150 °C Table 2. Thermal data Symbol Parameter Value Unit RthJC Thermal resistance junction-case Max 1.3 °C/W RthJA Thermal resistance junction-ambient (1) 1. When mounted on FR4 printed circuit board with 0.5cm2 of copper area (at least 35 μm think) connected to all TAB pins. Max 50 °C/W |
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