 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
28F320W30 Datasheet(PDF) 10 Page - Numonyx B.V |
|
||||||||||||||||||||||||||||||
28F320W30 Datasheet(HTML) 10 Page - Numonyx B.V |
|
|
10 / 102 page  Numonyx™ Wireless Flash Memory (W30) Datasheet November 2007 10 Order Number: 290702-13 Numonyx™ Wireless Flash Memory (W30) The flash device Command User Interface (CUI) links the system processor to the internal flash memory operation. A valid command sequence written to the CUI initiates the flash device Write State Machine (WSM) operation, which automatically executes the algorithms, timings, and verifications necessary to manage flash memory program and erase. An internal status register provides ready/busy indication results of the operation (success, fail, and so on). Three power-saving features– Automatic Power Savings (APS), standby, and RST#– can significantly reduce power consumption. • The flash device automatically enters APS mode following read cycle completion. • Standby mode begins when the system deselects the flash memory by de-asserting CE#. • Driving RST# low produces power savings similar to standby mode. It also resets the part to read-array mode (important for system-level reset), clears internal status registers, and provides an additional level of flash device write protection. 2.2 Memory Map and Partitioning The W30 flash memory device is divided into 4-Mbit physical partitions. This partitioning allows simultaneous RWW or RWE operations, and enables users to segment code and data areas on 4-Mbit boundaries. The flash memory array is asymmetrically blocked, which enables system code and data integration within a single flash device. Each block can be erased independently in block erase mode. Simultaneous program and erase operations are not allowed; only one partition at a time can be actively programming or erasing. See Table 1, “Bottom Parameter Memory Map” on page 11 and Table 2, “Top Parameter Memory Map” on page 11. • The 32-Mbit flash device has eight partitions. • The 64-Mbit flash device has 16 partitions. • The 128-Mbit flash device has 32 partitions. Each flash device density contains one parameter partition and several main partitions. The 4-Mbit parameter partition contains eight 4-Kword parameter blocks and seven 32- Kword main blocks. Each 4-Mbit main partition contains eight 32-Kword blocks. The bulk of the flash memory array is divided into main blocks that can store code or data, and parameter blocks that allow storage of frequently updated small parameters that are normally stored in EEPROM. By using software techniques, the word-rewrite functionality of EEPROMs can be emulated. . |
Similar Part No. - 28F320W30 |
|
Similar Description - 28F320W30 |
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.COM |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
