STTH6102TV datasheet(3/5 Pages) STMICROELECTRONICS

Part #	STTH6102TV

Description	HIGH EFFICIENCY ULTRAFAST DIODE

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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STTH6102TV

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400

0.0

0.1

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0.8

0.9

1.0

I (A)

M

T

δ=tp/T

tp

IM

P = 20W

P = 60W

P = 30W

δ

Fig. 1: Peak current versus duty cycle (per diode).

0

10

20

30

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50

60

70

80

90

100

0.0

0.1

0.2

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0.8

0.9

1.0

1.1

1.2

V(V)

FM

I(A)

FM

T =150°C

j

T =25°C

j

Fig. 2-1: Forward voltage drop versus forward

current (typical values, per diode).

0.1

1.0

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

Z/R

th(j-c)

Single pulse

t (s)

p

Fig. 3: Relative variation of thermal impedance

junction to case versus pulse duration.

10

100

1000

0

50

100

150

200

C(pF)

V (V)

R

F=1MHz

V

=30mV

T =25°C

OSC

RMS

j

Fig. 4: Junction capacitance versus reverse

voltage applied (typical values, per diode).

0

50

100

150

200

250

300

10

100

1000

Q (nC)

rr

dI /dt(A/µs)

F

I =30A

F

V =160V

R

T =125°C

j

T =25°C

j

Fig. 5: Reverse recovery charges versus dIF/dt

(typical values, per diode).

0

10

20

30

40

50

60

70

80

90

100

0.0

0.1

0.2

0.3

0.4

0.5

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0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

I

(A)

FM

V

(V)

FM

T =150°C

j

T =25°C

j

Fig. 2-2: Forward voltage drop versus forward

current (maximum values, per diode).

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