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STTH3002 Datasheet(PDF) 2 Page - STMicroelectronics |
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STTH3002 Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 10 page Characteristics STTH3002 2/10 1 Characteristics To evaluate the conduction losses use the following equation: P = 0.67 x IF(AV) + 0.007 IF 2 (RMS) Table 1. Absolute ratings (limiting values at Tj = 25° C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 200 V IF(RMS) RMS forward current 50 A IF(AV) Average forward current, δ = 0.5 DO-247 Tc = 135° C 30 A DOP3I Tc = 115° C D2PAK Tc = 135° C IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal 300 A Tstg Storage temperature range -65 to + 175 ° C Tj Maximum operating junction temperature 175 ° C Table 2. Thermal parameters Symbol Parameter Value Unit Rth(j-c) Junction to case DO-247 1.2 ° C/W DOP3I 1.8 D2PAK 1.2 Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ Max. Unit IR (1) Reverse leakage current Tj = 25° C VR = VRRM 20 µA Tj = 150° C 20 200 VF (2) Forward voltage drop Tj = 125° C IF = 25 A 0.77 0.85 V Tj = 25° C IF = 30 A 1.05 Tj = 150° C 0.8 0.88 1. Pulse test: tp = 5 ms, δ < 2 % 2. Pulse test: tp = 380 µs, δ < 2 % |
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