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L6393D Datasheet(PDF) 11 Page - STMicroelectronics |
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L6393D Datasheet(HTML) 11 Page - STMicroelectronics |
11 / 20 page L6393 Electrical characteristics 11/20 Symbol Pin Parameter Test condition Min Typ Max Unit Driving buffers section Iso 10, 13 High/low side source short circuit current VIN = Vih (tp < 10 µs) 270 mA Isi High/low side sink short circuit current VIN = Vil (tp < 10 µs) 430 mA Logic inputs Vil 1, 2, 3 Low level logic threshold voltage 0.83 V Vih High level logic threshold voltage 2.21 V IPHASEh 1 PHASE logic “1” input bias current PHASE = 15 V 175 260 µA IPHASEl PHASE logic “0” input bias current PHASE = 0 V 1 µA IBRAKEh 3 BRAKE logic “1” input bias current BRAKE = 15 V 175 260 µA IBRAKEl BRAKE logic “0” input bias current BRAKE = 0 V 1 µA ISDh 2 SD logic “1” input bias current SD = 15 V 30 100 µA ISDl SD logic “0” input bias current SD = 0 V 1 µA 1. RDSon is tested in the following way: RDSon = [(VCC - VCBOOT1) - (VCC - VCBOOT2)] / [I1(VCC,VCBOOT1) - I2(VCC,VCBOOT2)] where I1 is pin 14 current when VCBOOT = VCBOOT1, I2 when VCBOOT = VCBOOT2. Table 8. DC opereation electrical characteristics (VCC = 15 V; TJ = +25 °C) (continued) Table 9. Sense comparator Symbol Pin Parameter Test conditions Min Typ Max Unit Vio 8, 9 Input offset voltage ±10 TBD mV Iib Input bias current 1 µA Vol 6 Open drain low level Output voltage Iod = - 3 mA 0.5 V td_comp Comparator delay CPOUT pulled to 5 V through 100k Ω resistor 110 210 ns SR 6 Slew rate CL = 180 nF, Rpu = 5 kΩ TBD V/ µs |
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