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HC6856XVRCC60 Datasheet(PDF) 9 Page - Honeywell Solid State Electronics Center |
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HC6856XVRCC60 Datasheet(HTML) 9 Page - Honeywell Solid State Electronics Center |
9 / 12 page HC6856 9 TESTER AC TIMING CHARACTERISTICS QUALITY AND RADIATION HARDNESS ASSURANCE Honeywell maintains a high level of product integrity through process control, utilizing statistical process control, a com- plete “Total Quality Assurance System,” a computer data base process performance tracking system, and a radia- tion hardness assurance strategy. The radiation hardness assurance strategy starts with a technology that is resistant to the effects of radiation. Radiation hardness is assured on every wafer by irradiating test structures as well as SRAM product, and then monitor- ing key parameters which are sensitive to ionizing radia- tion. Conventional MIL-STD-883 TM 5005 Group E testing, which includes total dose exposure with Cobalt 60, may also be performed as required. This Total Quality approach ensures our customers of a reliable product by engineering in reliability, starting with process development and con- tinuing through product qualification and screening. SCREENING LEVELS Honeywell offers several levels of device screening to meet your system needs. “Engineering Devices” are available with limited performance and screening for breadboarding and/or evaluation testing. Hi-Rel Level B and S devices undergo additional screening per the requirements of MIL- STD-883. As a QML supplier, Honeywell also offers QML Class Q and V devices per MIL-PRF-38535 and are avail- able per the applicable Standard Military Drawing (SMD). QML devices offer ease of procurement by eliminating the need to create detailed specifications and offer benefits of improved quality and cost savings through standardization. RELIABILITY Honeywell understands the stringent reliability require- ments that space and defense systems require and has extensive experience in reliability testing on programs of this nature. This experience is derived from comprehen- sive testing of VLSI processes. Reliability attributes of the RICMOS™ process were characterized by testing specially designed irradiated and non-irradiated test structures from which specific failure mechanisms were evaluated. These specific mechanisms included, but were not limited to, hot carriers, electromigration and time dependent dielectric breakdown. This data was then used to make changes to the design models and process to ensure more reliable products. In addition, the reliability of the RICMOS™ process and product in a military environment was monitored by testing irradiated and non-irradiated circuits in accelerated dy- namic life test conditions. Packages are qualified for prod- uct use after undergoing Groups B & D testing as outlined in MIL-STD-883, TM 5005, Class S. The product is quali- fied by following a screening and testing flow to meet the customer’s requirements. Quality conformance testing is performed as an option on all production lots to ensure the ongoing reliability of the product. High Z = 2.9V 3 V 0 V 1.5 V VDD-0.5 V 0.5 V VDD/2 1.5 V VDD-0.4V 0.4 V High Z 3.4 V 2.4 V High Z VDD/2 0.4 V High Z 3.4 V 2.4 V High Z TTL I/O Configuration Input Levels* Output Sense Levels CMOS I/O Configuration High Z = 2.9V * Input rise and fall times <1 ns/V VDD-0.4V |
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