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MT41J64M16 Datasheet(PDF) 1 Page - Micon Design Technology Corporation |
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MT41J64M16 Datasheet(HTML) 1 Page - Micon Design Technology Corporation |
1 / 181 page Products and specifications discussed herein are subject to change by Micron without notice. 1Gb: x4, x8, x16 DDR3 SDRAM Features PDF: 09005aef826aa906/Source: 09005aef82a357c3 Micron Technology, Inc., reserves the right to change products or specifications without notice. 1Gb_DDR3_D1 .fm - Rev. D 8/1/08 EN 1 ©2006 Micron Technology, Inc. All rights reserved. DDR3 SDRAM MT41J256M4 – 32 Meg x 4 x 8 Banks MT41J128M8 – 16 Meg x 8 x 8 Banks MT41J64M16 – 8 Meg x 16 x 8 Banks Features •VDD = VDDQ = +1.5V ±0.075V • 1.5V center-terminated push/pull I/O • Differential bidirectional data strobe •8n-bit prefetch architecture • Differential clock inputs (CK, CK#) •8 internal banks • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals • CAS (READ) latency (CL): 5, 6, 7, 8, 9, 10, or 11 • POSTED CAS ADDITIVE latency (AL): 0, CL - 1, CL - 2 • CAS (WRITE) latency (CWL): 5, 6, 7, 8, based on tCK • Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS]) • Selectable BC4 or BL8 on-the-fly (OTF) • Self refresh mode •TC of 0 oC to 95oC – 64ms, 8,192 cycle refresh at 0oC to 85oC – 32ms at 85oC to 95oC • Clock frequency range of 300–800 MHz • Self refresh temperature (SRT) •Automatic self refresh (ASR) • Write leveling •Multipurpose register • Output driver calibration Options Marking • Configuration – 256 Meg x 4 256M4 – 128 Meg x 8 128M8 – 64 Meg x 16 64M16 • FBGA package (Pb-free) - x4, x8 – 78-ball FBGA (8mm x 11.5mm) Rev. F JP – 78-ball FBGA (9mm x 11.5mm) Rev. D HX – 86-ball FBGA (9mm x 15.5mm) Rev. B BY • FBGA package (Pb-free) - x16 – 96-ball FBGA (9mm x 15.5mm) Rev. B LA • Timing - cycle time – 1.25ns @ CL = 11 (DDR3-1600) -125 – 1.25ns @ CL = 10 (DDR3-1600) -125E – 1.25ns @ CL = 9 (DDR3-1600) -125F – 1.5ns @ CL = 10 (DDR3-1333) -15 – 1.5ns @ CL = 9 (DDR3-1333) -15E – 1.5ns @ CL = 8 (DDR3-1333) -15F – 1.87ns @ CL = 8 (DDR3-1066) -187 – 1.87ns @ CL = 7 (DDR3-1066) -187E – 2.5ns @ CL = 6 (DDR3-800) -25 – 2.5ns @ CL = 5 (DDR3-800) -25E • Revision :B/:D/:F Table 1: Key Timing Parameters Speed Grade Data Rate (MT/s) Target tRCD-tRP-CL tRCD (ns) tRP (ns) CL (ns) -125 1600 11-11-11 13.75 13.75 13.75 -125E 1600 10-10-10 12.5 12.5 12.5 -125F 1600 9-9-9 11.25 11.25 11.25 -15 1333 10-10-10 15 15 15 -15E 1333 9-9-9 13.5 13.5 13.5 -15F 1333 8-8-8 12 12 12 -187 1066 8-8-8 15 15 15 -187E 1066 7-7-7 13.1 13.1 13.1 -25 800 6-6-6 15 15 15 -25E 800 5-5-5 12.5 12.5 12.5 |
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