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| AT29LV1024 |
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 ATMEL
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1 page 
1 Features • Single Voltage, Range 3V to 3.6V Supply • 3-Volt Only Read and Write Operation • Software Protected Programming • Fast Read Access Time - 150 ns • Low Power Dissipation – 15 mA Active Current – 50 µA CMOS Standby Current • Sector Program Operation – Single Cycle Reprogram (Erase and Program) – 512 Sectors (128 words/sector) – Internal Address and Data Latches for 128 Words • Fast Sector Program Cycle Time - 20 ms • Internal Program Control and Timer • DATA Polling for End of Program Detection • Typical Endurance > 10,000 Cycles • CMOS and TTL Compatible Inputs and Outputs • Commercial and Industrial Temperature Ranges Description The AT29LV1024 is a 3-volt only in-system Flash programmable and erasable read only memory (PEROM). Its 1 megabit of memory is organized as 65,536 words by 16 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of just 54 mW. When the device is deselected, the CMOS standby current is less than 50 µA. The device endurance is 1-Megabit (64K x 16) 3-volt Only Flash Memory AT29LV1024 Rev. 0564A–10/98 Pin Configurations Pin Name Function A0 - A15 Addresses CE Chip Enable OE Output Enable WE Write Enable I/O0 - I/O15 Data Inputs/Outputs NC No Connect DC Don’t Connect TSOP Top View Type 1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 NC A0 A1 A2 A3 A4 A5 NC A6 A7 A8 VSS A9 A10 A11 NC A12 A13 A14 A15 NC WE VCC NC NC OE O0 O1 O2 O3 O4 NC O5 O6 O7 VSS O8 O9 O10 NC O11 O12 O13 O14 O15 CE NC NC PLCC Top View 7 8 9 10 11 12 13 14 15 16 17 39 38 37 36 35 34 33 32 31 30 29 I/O12 I/O11 I/O10 I/O9 I/O8 GND NC I/O7 I/O6 I/O5 I/O4 A13 A12 A11 A10 A9 GND NC A8 A7 A6 A5 (continued) |
