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STGD3NB60SD Datasheet(PDF) 2 Page - STMicroelectronics |
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STGD3NB60SD Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 8 page  THERMAL DATA Rthj-case Rthj-amb Rthc-sink Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ 3.125 100 1.5 oC/W oC/W oC/W ELECTRICAL CHARACTERISTICS (Tj = 25 oC unless otherwise specified) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit VBR(CES) Collector-Emitter Breakdown Voltage IC = 250 µA VGE = 0 600 V ICES Collector cut-off (VGE = 0) VCE = Max Rating Tj = 25 oC VCE = Max Rating Tj = 125 o C 10 100 µA µA IGES Gate-Emitter Leakage Current (VCE = 0) VGE = ± 20 V VCE = 0 ± 100 nA ON ( ∗) Symbol Parameter Test Conditions Min. Typ. Max. Unit VGE(th) Gate Threshold Voltage VCE = VGE IC = 250 µA 2.5 5 V VCE(SAT) Collector-Emitter Saturation Voltage VGE = 15 V IC = 1.5 A VGE = 15 V IC = 3 A VGE = 15 V IC = 3 A Tj = 125 o C 1 1.2 1.1 1.5 V V V DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs Forward Transconductance VCE =25 V IC = 3 A 1.7 2.5 S Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 25 V f = 1 MHz VGE = 0 255 30 5.6 330 40 7 pF pF pF QG QGE QGC Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCE = 480 V IC = 3 A VGE = 15 V 18 5.4 5.5 nC nC nC ICL Latching Current Vclamp = 480 V RG=1k Ω Tj = 150 oC 12 A SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Delay Time Rise Time VCC = 480 V IC = 3 A VGE= 15 V RG = 1k Ω 125 150 ns ns (di/dt)on Eon Turn-on Current Slope Turn-on Switching Losses VCC = 480 V IC = 3 A RG = 1k Ω VGE = 15 V Tj = 125 oC 50 1100 A/ µs µJ STGD3NB60SD 2/8 |
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