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DS87C530-ECL Datasheet(PDF) 11 Page - Dallas Semiconductor |
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DS87C530-ECL Datasheet(HTML) 11 Page - Dallas Semiconductor |
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11 / 44 page  DS87C530/DS83C530 11 of 44 pin. The nominal battery voltage is 3V. The VBAT pin will not source current. Therefore, a super cap requires an external resistor and diode to supply charge. The backup lifetime is a function of the battery capacity and the data retention current drain. This drain is specified in the electrical specifications. The circuit loads the VBAT only when VCC has fallen below VBAT. Thus the actual lifetime depends not only on the current and battery capacity, but also on the portion of time without power. A very small lithium cell provides a lifetime of more than 10 years. INTERNAL BACKUP CIRCUIT Figure 3 IMPORTANT APPLICATION NOTE The pins on the DS87C530/DS83C530 are generally as resilient as other CMOS circuits. They have no unusual susceptibility to electrostatic discharge (ESD) or other electrical transients. However, no pin on the DS87C530/DS83C530 should ever be taken to a voltage below ground. Negative voltages on any pin can turn on internal parasitic diodes that draw current directly from the battery. If a device pin is connected to the “outside world” where it may be handled or come in contact with electrical noise, protection should be added to prevent the device pin from going below -0.3V. Some power supplies can give a small undershoot on power up, which should be prevented. Application Note 93, “Design Guidelines for Microcontrollers Incorporating NV RAM,” discusses how to protect the DS87C530/DS83C530 against these conditions. MEMORY RESOURCES Like the 8051, the DS87C530/DS83C530 uses three memory areas. The total memory configuration of the device is 16kB of ROM, 1kB of data SRAM and 256 bytes of scratchpad or direct RAM. The 1kB of data space SRAM is read/write accessible and is memory mapped. This on-chip SRAM is reached by the MOVX instruction. It is not used for executable memory. The scratchpad area is 256 bytes of register mapped RAM and is identical to the RAM found on the 80C52. There is no conflict or overlap among the 256 bytes and the 1 kB as they use different addressing modes and separate instructions. OPERATIONAL CONSIDERATION The erasure window of the windowed CERQUAD should be covered without regard to the programmed/ unprogrammed state of the EPROM. Otherwise, the device may not meet the AC and DC parameters listed in the datasheet. |
Similar Part No. - DS87C530-ECL |
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Similar Description - DS87C530-ECL |
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