STD4NB25 datasheet(2/6 Pages) STMICROELECTRONICS

Part #	STD4NB25

Description	N - CHANNEL 250V - 0.95ohm - 4A - DPAK/IPAK PowerMESHO MOSFET

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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2 / 6 page

THERMAL DATA

Rthj-case

Rthj-amb

Rthc-sink

Tl

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

Thermal Resistance Case-sink

Typ

Maximum Lead Temperature For Soldering Purpose

3.12

100

1.5

275

oC/W

oC

AVALANCHE CHARACTERISTICS

Symbol

Parameter

Max Value

Unit

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)

4A

EAS

Single Pulse Avalanche Energy

(starting Tj = 25

oC, ID = IAR, VDD = 50 V)

75

mJ

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

OFF

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250

µA

VGS = 0

250

V

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

Tc = 125

oC

1

10

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS =

± 30 V

± 100

nA

ON (

∗)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VGS(th)

Gate Threshold

Voltage

VDS = VGS

ID = 250

µA

34

5

V

RDS(on)

Static Drain-source On

Resistance

VGS = 10V

ID =2 A

0.95

1.1

Ω

ID(on)

On State Drain Current VDS > ID(on) x RDS(on)max

VGS = 10 V

4A

DYNAMIC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (

∗)

Forward

Transconductance

VDS > ID(on) x RDS(on)max

ID =2 A

0.7

1.6

S

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VDS = 25 V

f = 1 MHz

VGS = 0

260

70

9

350

100

13

pF

STD4NB25

2/6

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