X-band High Power Amplifier

CHA7010

Ref. DSCHA70104054 - 23 Feb 04

6/7

Specifications subject to change without notice

Assembly recommendations

For thermal and electrical considerations, the chip should be brazed on a metal base plate.

The RF, DC and modulation port inter-connections should be done according to the following table:

Port

Connection

External capacitor

IN (24)

Inductance (Lbonding) = 0.4nH

OUT (12)

Inductance (Lbonding) = 0.4nH

Vc (5, 10, 14, 19)

Inductance ~ 1nH

C1 ~ 100pF

C2 ~ 10nF

C3 ~220 nF

Vctr (3, 8, 16, 21)

Inductance ~ 1nH

C1 ~ 100pF

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