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STD3N30L Datasheet(PDF) 2 Page - STMicroelectronics |
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STD3N30L Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 10 page THERMAL DATA Rthj-case Rthj-amb Rthc- sink Tl Thermal Resist ance Junct ion-case Max Thermal Resist ance Junct ion-ambient Max Thermal Resist ance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 2.5 100 1.5 275 oC/W oC/W oC/W oC AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Uni t IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ <1%) 3A EAS Single Pulse Avalanche Energy (st arting Tj =25 oC, ID =IAR,VDD =50 V) 20 mJ EAR Repet itive Avalanche Energy (pulse width limited by Tj max, δ <1%) 5mJ IAR Avalanche Current, Repetitive or Not-Repetitive (T c = 100 oC, pulse width limited by Tj max, δ <1%) 2A ELECTRICAL CHARACTERISTICS (Tcase =25 oC unless otherwise specified) OFF Symbol Parameter Test Condi tions Mi n. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID =250 µAVGS = 0 300 V IDSS Zero Gate Volt age Drain Current (VGS =0) VDS =Max Rating VDS = Max Rating x 0.8 Tc =125 oC 10 100 µA µA IGSS Gate-body Leakage Current (VDS =0) VGS = ± 15 V ± 100 nA ON ( ∗) Symbol Parameter Test Condi tions Mi n. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS =VGS ID =250 µA1 1.6 2.5 V RDS(on) St atic Drain-source On Resist ance VGS =5 V ID = 1.5 A 1.15 1.4 Ω ID(on) On St ate Drain Current VDS >ID(on) xRDS(on)max VGS =10 V 3A DYNAMIC Symbol Parameter Test Condi tions Mi n. Typ. Max. Unit gfs ( ∗)Forward Transconductance VDS >ID(on) xRD S(on)max ID =1.5 A 1.5 3.5 S Ciss Coss Crss I nput Capacitance Output Capacit ance Reverse Transfer Capacitance VDS = 25V f = 1MHz VGS =0 580 75 15 800 120 25 pF pF pF STD3N30L 2/10 |
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