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STD2NC50 Datasheet(PDF) 3 Page - STMicroelectronics |
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STD2NC50 Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 10 page 3/10 STD2NC50 / STD2NC50-1 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 250V, ID = 1.4 A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) 10 10 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 400V, ID = 2.8 A, VGS = 10V 10 2.5 4.5 13.5 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time VDD = 400V, ID = 2.8 A, RG =4.7Ω, VGS = 10V (see test circuit, Figure 5) 10 8 20 ns ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 2.2 A ISDM (2) Source-drain Current (pulsed) 8.8 A VSD (1) Forward On Voltage ISD = 2.2 A, VGS = 0 1.6 V trr Reverse Recovery Time ISD = 2.8A, di/dt = 100A/µs, VDD = 100V, Tj = 150°C (see test circuit, Figure 5) 380 ns Qrr Reverse Recovery Charge 2200 nC IRRM Reverse Recovery Current 11.5 A Safe Operating Area Thermal Impedence |
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Similar Description - STD2NC50 |
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