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APT13003EZ-E1 Datasheet(PDF) 3 Page - BCD Semiconductor Manufacturing Limited |
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APT13003EZ-E1 Datasheet(HTML) 3 Page - BCD Semiconductor Manufacturing Limited |
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3 / 9 page  HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR APT13003E Data Sheet 3 May 2008 Rev. 1. 2 BCD Semiconductor Manufacturing Limited Parameter Symbol Value Unit Thermal Resistance (Junction-to-Case) For TO-92 RθJC 83.3 oC/W For TO-126 6.25 Thermal Resistance (Junction-to-Ambient) For TO-92 RθJA 113.6 oC/W For TO-126 96 Thermal Characteristics Parameter Symbol Conditions Min Typ Max Unit Collector Cut-off Current (VBE=-1.5V) ICEV VCE=700V 10 μA Collector-Emitter Sustaining Voltage (IB=0) VCEO (sus) IC=100μA 465 V Collector-Emitter Saturation Voltage (Note 3) VCE (sat) IC=0.5A, IB=0.1A 0.17 0.3 V IC=1.0A, IB=0.25A 0.29 0.4 Base-Emitter Saturation Voltage (Note 3) VBE (sat) IC=0.5A, IB=0.1A 1.0 V IC=1.0A, IB=0.25A 1.2 DC Current Gain (Note 3) hFE IC=0.3A, VCE=2V 15 IC=0.5A, VCE=2V 131730 IC=1.0A, VCE=2V 5 25 Output Capacitance Cob VCB=10V, f=0.1MHZ 16 pF Current Gain Bandwidth Product fT VCE=10V, IC=0.1A 4 MHz Turn-on Time with Resistive Load ton IC=1A, VCC=125V, IB1=0.2A, IB2=-0.2A, TP=25μS 0.3 1 μs Storage Time with Resistive Load ts 1.8 3 Fall Time with Resistive Load tf 0.28 0.4 ( TC=25 oC, unless otherwise specified.) Electrical Characteristics Note 3: Pulse test for Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. |
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