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2N2219A_03 Datasheet(PDF) 2 Page - STMicroelectronics

Part No. 2N2219A_03
Description  HIGH SPEED SWITCHES
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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THERMAL DATA
TO-39
TO-18
Rthj-case
Rthj-amb
Thermal Resistance Junction-Case
Max
Thermal Resistance Junction-Ambient
Max
50
187.5
83.3
300
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICBO
Collector Cut-off
Current (IE = 0)
VCB = 60 V
VCB = 60 V
Tj = 150
oC
10
10
nA
µA
ICEX
Collector Cut-off
Current (VBE = -3V)
VCE = 60 V
10
nA
IBEX
Base Cut-off Current
(VBE = -3V)
VCE = 60 V
20
nA
IEBO
Emitter Cut-off Current
(IC = 0)
VEB = 3 V
10
nA
V(BR)CBO
Collector-Base
Breakdown Voltage
(IE = 0)
IC = 10
µA
75
V
V(BR)CEO
∗ Collector-Emitter
Breakdown Voltage
(IB = 0)
IC = 10 mA
40
V
V(BR)EBO
Emitter-Base
Breakdown Voltage
(IC = 0)
IE = 10
µA
6V
VCE(sat)
∗ Collector-Emitter
Saturation Voltage
IC = 150 mA
IB = 15 mA
IC = 500 mA
IB = 50 mA
0.3
1
V
V
VBE(sat)
∗ Base-Emitter
Saturation Voltage
IC = 150 mA
IB = 15 mA
IC = 500 mA
IB = 50 mA
0.6
1.2
2
V
V
hFE
DC Current Gain
IC = 0.1 mA
VCE = 10 V
IC = 1 mA
VCE = 10 V
IC = 10 mA
VCE = 10 V
IC = 150 mA
VCE = 10 V
IC = 500 mA
VCE = 10 V
IC = 150 mA
VCE = 1 V
IC = 10 mA
VCE = 10 V
Tamb = -55
oC
35
50
75
100
40
50
35
300
hfe
Small Signal Current
Gain
IC = 1 mA
VCE = 10 V
f = 1KHz
IC = 10 mA
VCE = 10 V
f = 1KHz
50
75
300
375
fT
Transition Frequency
IC = 20 mA
VCE = 20 V
f = 100 MHz
300
MHz
CEBO
Emitter-Base
Capacitance
IC = 0
VEB = 0.5 V
f = 100KHz
25
pF
CCBO
Collector-Base
Capacitance
IE = 0
VCB = 10 V
f = 100 KHz
8
pF
Re(hie)
Real Part of Input
Impedance
IC = 20 mA
VCE = 20 V
f = 300MHz
60
* Pulsed: Pulse duration = 300
µs, duty cycle ≤ 1 %
2N2219A / 2N2222A
2/7




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