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STP80NF12FP Datasheet(PDF) 2 Page - STMicroelectronics |
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STP80NF12FP Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 12 page STB80NF12 STW80NF12 STP80NF12 STP80NF12FP 2/12 THERMAL DATA ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF ON (1) DYNAMIC TO-247 D2PAK TO-220 TO-220FP Rthj-case Thermal Resistance Junction-case Max 0.5 0.5 3.33 °C/W Rthj-amb Tl Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max 50 300 62.5 300 62.5 300 °C/W °C Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 120 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating TC = 125°C 1 10 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V ±100 nA Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 µA 2V RDS(on) Static Drain-source On Resistance VGS = 10 V ID = 40 A 0.013 0.018 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (*) Forward Transconductance VDS = 15 V ID = 40 A 80 S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V f = 1 MHz VGS = 0 4300 600 230 pF pF pF |
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