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STB80NF03L-04 Datasheet(PDF) 2 Page - STMicroelectronics

Part # STB80NF03L-04
Description  N-CHANNEL 30V - 0.0035 ohm - 80A TO-262/TO-263 STripFET POWER MOSFET
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB80NF03L-04 Datasheet(HTML) 2 Page - STMicroelectronics

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THERMAL DATA
Rthj-case
Rthj -amb
Rthc-sink
T l
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature F or Soldering Purpose
0.7
62.5
0.5
300
oC/W
oC/ W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbo l
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
80
A
EAS
Single Pulse Avalanche Energy
(starting Tj =25
oC, ID =IAR,VDD =15 V)
600
mJ
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID =250
µAVGS =0
30
V
IDSS
Zero Gat e Voltage
Drain Current (VGS =0)
VDS =Max Rating
VDS =Max Rating
Tc =125
oC
1
10
µA
µA
IGSS
Gat e-body Leakage
Current (VDS =0)
VGS =
± 20 V
± 100
nA
ON (
∗)
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
VGS(th)
Gat e Threshold Voltage VDS =VGS
ID = 250
µA1
1.5
2. 5
V
RDS(on)
Static Drain-source On
Resistance
VGS =10V
ID =40 A
VGS =4.5V ID =40 A
0.0035
0.004
0.004
0.0055
Ω
Ω
ID(o n)
On State Drain Current
VDS >ID(o n) xRDS(on )max
VGS =10 V
80
A
DYNAMIC
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
gfs (
∗)Forward
Transconductance
VDS >ID(o n) xRDS(on )max
ID =15 A
20
50
S
Ciss
Cos s
Crss
Input Capacitance
Out put Capacitance
Reverse Transfer
Capacitance
VDS = 25V
f = 1MHz
VGS = 0
7000
1700
600
pF
pF
pF
STB80NF03L-04
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