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LP3999ITL-1.875 Datasheet(PDF) 5 Page - National Semiconductor (TI) |
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LP3999ITL-1.875 Datasheet(HTML) 5 Page - National Semiconductor (TI) |
5 / 12 page Electrical Characteristics (Continued) Unless otherwise noted, V EN = 1.5, VIN =VOUT(NOM) + 1.0V, CIN = 1 µF, IOUT = 1 mA, COUT = 1 µF, CBP = 0.01 µF. Typical values and limits appearing in normal type apply for T J = 25˚C. Limits appearing in boldface type apply over the full tempera- ture range for operation, −40 to +125˚C. (Notes 11, 12) Symbol Parameter Conditions Typical Limit Units Min Max FULL V OUT RANGE I Q Quiescent Current V EN = 1.5V, IOUT =0mA 85 150 µA V EN = 1.5V, IOUT = 150 mA 140 200 V EN = 0.4V 0.003 1.5 I SC Short Circuit Current Limit 450 mA E N Output Noise Voltage ((Note 9)) BW = 10 Hz to 100 kHz, V IN = 4.2V, No Load 10 µVrms BW = 10 Hz to 100 kHz, V IN = 4.2V, 1mA Load 30 T SHUTDOWN Thermal Shutdown Temperature 160 ˚C Hysteresis 20 ENABLE CONTROL CHARACTERISTICS I EN Maximum Input Current at V EN Input V EN = 0.0V and VIN = 6.0V 0.001 µA V IL Low Input Threshold 0.4 V V IH High Input Threshold 0.9 V TIMING CHARACTERISTICS T ON Turn On Time (Note 9) To 95% Level (Note 10) 140 µs Note 1: Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions under which operation of the device is guaranteed. Operating Ratings do not imply guaranteed performance limits. For guaranteed performance limits and associated test conditions, see the Electrical Characteristics tables. Note 2: All voltages are with respect to the potential at the GND pin. Note 3: For further information on these packages please refer to the following application notes; AN-1112 Micro SMD Package Wafer Level Chip Scale Package. Note 4: Internal Thermal shutdown circuitry protects the device from permanent damage. Note 5: In applications where high power dissipation and/or poor thermal resistance is present, the maximum ambient temperature may have to be derated. Maximum ambient temperature (TA(max)) is dependant on the maximum operating junction temperature (TJ(max-op)), the maximum power dissipation (PD(max)), and the junction to ambient thermal resistance in the application ( θJA). This relationship is given by :- T A(max) =TJ(max-op) −(PD(max) x θ JA) Note 6: Junction to ambient thermal resistance is highly dependant on the application and board layout. In applications where high thermal dissipation is possible, special care must be paid to thermal issues in the board design. Note 7: The human body is 100 pF discharge through 1.5 k Ω resistor into each pin. The machine model is a 200 pF capacitor discharged directly into each pin. Note 8: The device maintains the regulated output voltage without load. Note 9: This electrical specification is guaranteed by design. Note 10: Time from VEN = 0.9V to VOUT = 95% (VOUT(NOM)) Note 11: All limits are guaranteed. All electrical characteristics having room-temperature limits are tested during production at TJ = 25˚C or correlated using Statistical Quality Control methods. Operation over the temperature specification is guaranteed by correlating the electrical characteristics to process and temperature variations and applying statistical process control. Note 12: VOUT(NOM) is the stated output voltage option for the device. Recommended Output Capacitor Symbol Parameter Conditions Typical Limit Units Min Max C OUT Output Capacitor Capacitance (Note 13) 1.0 0.70 µF ESR 5 500 m Ω Note 13: The capacitor tolerance should be 30% or better over temperature. Recommended capacitor type is X7R however dependant on application X5R,Y5V and Z5U can also be used. www.national.com 5 |
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