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Model A150N50X4B

Features:

• RoHS Compliant

• 150 Watts

• DC - 2.7 GHz

• AlN Ceramic

• Non-Nichrome Resistive

Element

• Low VSWR

Chip Termination

Ω

Ω

Ω

Description

The A150N50X4B is high performance Aluminum Nitride (AlN) chip

termination intended as a cost competitive alternative to Beryllium Oxide

(BeO). The termination is well suited to all cellular frequency bands such

as; AMPS, GSM, DCS, PCS, PHS and UMTS. The high power handling

makes the part ideal for terminating circulators, and for use in power

combiners. The termination is also RoHS compliant!

General Specifications

Resistive Element

Thick film

Substrate

AlN Ceramic

Terminal Finish

Matte Tin over Nickel Barrier

Operating

Temperature

-55 to +200°C (see de rating chart)

Tolerance is ±0.010”, unless otherwise specified. Designed to meet of exceed

applicable portions of MIL-E-5400. All dimensions in inches.

Electrical Specifications

Resistance Value:

50 Ohms, ± 2%

Power:

150 Watts

Frequency Range:

DC – 2.7 GHz

Return Loss

>26dB to 2.0 GHz

>20dB to 2.7 GHz

Specification based on unit properly installed using suggested mounting instructions

and a 50 ohm nominal impedance. Specifications subject to change.

Outline Drawing

A150N50X4 (097) Rev E

Pb