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EMC326SP16AJS-90L Datasheet(PDF) 7 Page - Emerging Memory & Logic Solutions Inc

Part # EMC326SP16AJS-90L
Description  2Mx16 bit CellularRAM
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Manufacturer  EMLSI [Emerging Memory & Logic Solutions Inc]
Direct Link  http://www.emlsi.com
Logo EMLSI - Emerging Memory & Logic Solutions Inc

EMC326SP16AJS-90L Datasheet(HTML) 7 Page - Emerging Memory & Logic Solutions Inc

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EMC326SP16AJ
2Mx16 CellularRAM
7
Preliminary
Table 1 : PIN Descriptions
Note:
1. When using asynchronous mode or page mode exclusively, CLK and ADV# inputs can be tied to Vss. WAIT will be asserted but should be ignored
during asynchronous and page mode operations.
Symbol
Type
Descriptions
A[20:0]
Input
Address inputs: Inputs for addresses during READ and WRITE operations. Addresses are internally
latched during READ and WRITE cycles. The address lines are also used to define the value to be loaded
into the BCR or the RCR.
CLK
(Note1)
Input
Clock: Synchronizes the memory to the system operating frequency during synchronous operations.
When configured for synchronous operation, the address is latched on the first rising CLK edge when
ADV# is active. CLK is static LOW during asynchronous access READ and WRITE operations and during
PAGE READ ACCESS operations.
ADV#
(Note1)
Input
Address valid: Indiates that a valid address is present on the address inputs. Addresses can be latched on
the rising edge of ADV# during asynchronous READ and WRITE operations. ADV# can be held LOW
during asynchronous READ and WRITE operations.
CRE
Input
Control register enable: When CRE is HIGH, WRITE operations load the RCR or BCR, and READ
operations access the RCR, BCR, or DIDR.
CE#
Input
Chip enable: Activates the device when LOW. When CE# is HIGH, the device is disabled and goes into
standby or deep power-down mode.
OE#
Input
Output enable: Enables the output buffers when LOW. When OE# is HIGH, the output buffers are
disabled.
WE#
Input
Write enable: Determines if a given cycle is a WRITE cycle. If WE# is LOW, the cycle is a WRITE to either
a configuration register or to the memory array.
LB#
Input
Lower byte enable. DQ[7:0]
UB#
Input
Upper byte enable. DQ[15:8]
DQ[15:0]
Input/Output Data inputs/outputs.
WAIT
(Note1)
Output
Wait: Provides data-valid feedback during burst READ and WRITE operations. The signal is gated by
CE#. WAIT is used to arbitrate collisions between refresh and READ/WRITE operations. WAIT is also
asserted at the end of a row unless wrapping within the burst length. WAIT is asserted and should be
ignored during asynchronous and page mode operations. WAIT is High-Z when CE# is HIGH.
RFU
-
Reserved for future use.
Vcc
Supply
Device power supply: (1.70V~1.95V) Power supply for device core operation.
VccQ
Supply
I/O power supply: (1.70V~1.95V) Power supply for input/output buffers.
Vss
Supply
Vss must be connected to ground.
VssQ
Supply
VssQ must be connected to ground.


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