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EMC646SP16KP-12LF Datasheet(PDF) 7 Page - Emerging Memory & Logic Solutions Inc

Part # EMC646SP16KP-12LF
Description  4Mx16 bit CellularRAM AD-MUX
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Manufacturer  EMLSI [Emerging Memory & Logic Solutions Inc]
Direct Link  http://www.emlsi.com
Logo EMLSI - Emerging Memory & Logic Solutions Inc

EMC646SP16KP-12LF Datasheet(HTML) 7 Page - Emerging Memory & Logic Solutions Inc

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EMC646SP16K
4Mx16 CellularRAM AD-MUX
7
Preliminary
Table 1: SIGNAL DESCRIPTIONS
Note:
1. When using asynchronous mode exclusively, CLK can be tied to VSSQ or VCCQ. WAIT should be ignored during asynchronous mode operations.
Symbol
Type
Descriptions
A[21:16]
Input
Address inputs: Inputs for addresses during READ and WRITE operations. Addresses are internally latched
during READ and WRITE cycles. The address lines are also used to define the value to be loaded into the
BCR or the RCR.
CLK
(note1)
Input
Clock: Synchronizes the memory to the system operating frequency during synchronous operations. When
configured for synchronous operation, the address is latched on the first rising CLK edge when ADV# is
active. CLK must be static (HIGH or LOW) during asynchronous access READ and WRITE operations
when burst mode is enabled.
ADV#
(note1)
Input
Address valid: Indiates that a valid address is present on the address inputs. Addresses are latched on the
rising edge of ADV# during asynchronous READ and WRITE operations.
CRE
Input
Control register enable: When CRE is HIGH, WRITE operations load the RCR or BCR, and READ
operations access the RCR, BCR, or DIDR.
CE#
Input
Chip enable: Activates the device when LOW. When CE# is HIGH, the device is disabled and goes into
standby mode.
OE#
Input
Output enable: Enables the output buffers when LOW. When OE# is HIGH, the output buffers are disabled.
WE#
Input
Write enable: Determines if a given cycle is a WRITE cycle. If WE# is LOW, the cycle is a WRITE to either a
configuration register or to the memory array.
LB#
Input
Lower byte enable. DQ[7:0]
UB#
Input
Upper byte enable. DQ[15:8]
A/DQ[15:0] Input/Output
Address/data I/Os: These pins are a multiplexed address/data bus. As inputs for address, these pins
behave as A[15:0]. A[0] is the LSB of the 16-bit word address within the CellularRAM device. Address,
RCR, and BCR values are loaded with ADV# LOW. Data is input or output when ADV# is HIGH.
WAIT
(note1)
Output
Wait: Provides data-valid feedback during burst READ and WRITE operations. WAIT is used to arbitrate
collisions between refresh and READ/WRITE operations. WAIT is also asserted at the end of row unless
wrapping within the burst length. Wait should be ignored during asynchronous operations. WAIT is High-Z
when CE# is HIGH.
RFU
-
Reserved for future use.
VCC
Supply
Device power supply: (1.70V.1.95V) Power supply for device core operation.
VCCQ
Supply
I/O power supply: (1.70V.1.95V) Power supply for input/output buffers.
VSS
Supply
VSS must be connected to ground.
VSSQ
Supply
VSSQ must be connected to ground.


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