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EM7164SU16-10S Datasheet(PDF) 9 Page - Emerging Memory & Logic Solutions Inc |
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EM7164SU16-10S Datasheet(HTML) 9 Page - Emerging Memory & Logic Solutions Inc |
9 / 13 page EM7164SU16 Series 1Mx16 Single Transistor RAM 9 merging Memory & Logic Solutions Inc. merging Memory & Logic Solutions Inc. Preliminary NOTES (WRITE CYCLE) 1. A write occurs during the overlap(tWP) of low CS, low WE and low UB or LB. A write begins at the last transition among low CS and low WE with asserting UB or LB low for single byte operation or simultaneously asserting UB and LB low for word operation. A write ends at the earliest transition among high CS and high WE. The tWP is measured from the beginning of write to the end of write. 2. tCW is measured from CS going low to end od write. 3. tAS is measured from the address valid to the beginning of write. 4. tWR is measured from the end of write to the address change. tWR applied in case a write ends as CS or WE going high. 5. Do not Access device with cycle timing shorter than tWC for continuous periods > 40us. tWR tWC Address CS LB, UB WE Data In tCW tAW tBW tWP tAS tDW tDH WRITE CYCLE (3) (UB, LB controlled, ZZ=OE=VIH) Data Valid High-Z Data Out |
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