7

EMD12324PV

512M: 16M x 32 Mobile DDR SDRAM

Rev 0.0

Preliminary

Electrical Specifications

Table 3: ABSOLUTE MAXIMUM RATINGS

NOTE :

Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.

Functional operation should be restricted to recommended operating condition.

Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

Table 4: DC OPERATING CONDITIONS

NOTE :

1. Under all conditions, VDDQ must be less than or equal to VDD.

2. These parameters should be tested at the pin on actual components and may be checked at either the pin or the pad in simulation.

Parameter

Symbol

Value

Unit

-0.5 ~ 2.5

V

-0.5 ~ 2.5

V

Storage temperature

-55 ~ +150

℃

Power dissipation

1.0

W

Short circuit current

50

㎃

Parameter

Symbol

Min

Typ

Max

Unit

Note

Supply voltage

1.7

1.8

1.95

V

1

1.7

1.8

1.95

V

1

Input logic high voltage

1.8

V2

Input logic low voltage

-0.3

0

0.3

V

2

Output logic high voltage

--

V

Output logic low voltage

--

V

Input leakage current

-2

-

2

㎂

Output leakage current

-5

-

5

㎂

Pin

Symbol

Min

Max

Unit

Note

Input capacitance

(ADD, BA0~1, RASB, CASB, WEB, CSB, CKE)

1.5

3.0

㎊

Input capacitance(CK, CKB)

1.5

3.5

㎊

Data & DQS input/output capacitance

2.0

4.5

㎊

Input capacitance(DM)

2.0

4.5

㎊