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EMLS232TAW-6E Datasheet(PDF) 2 Page - Emerging Memory & Logic Solutions Inc |
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EMLS232TAW-6E Datasheet(HTML) 2 Page - Emerging Memory & Logic Solutions Inc |
2 / 14 page Rev 0.3 EMLS232TA Series 512K x 32 x 4Banks Low Power SDRAM 512K x 32Bit x 4 Banks Low Power SDRAM ORDERING INFORMATION NOTE : 1. In case of 40 Frequency, CL1 can be supported. 2. Ramsway are not designed or manufactured for use in a device or system that is used under circumstance in which human life is potentially at stake. Please contact to the memory marketing team in ramsway when considering the use of a product contained herein for any specific purpose, such as medical,aerospace, nuclear, military, vehicular or undersea repeater use. Part No. Max Freq. Interface Package EMLS232TAW-6(E) 133 (CL3), 100 (CL2) LVCMOS Wafer Biz. FEATURES 2.8V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length(1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). EMRS cycle with address key programs. All inputs are sampled at the positive going edge of the system clock. Burst read single-bit write operation. Special Function Support. . PASR(Partial Array Self Refresh). . Internal auto TCSR (Temperature Compensated Self Refresh) . DS (Driver Strength) . Deep power down DQM for masking. Auto refresh. 64 refresh period (4K cycle). Commercial Temperature Operation (-0 ~ 70 ) Extended Temperature Operation (-25 ~ 85 ) GENERAL DESCRIPTION The EMLS232TA series is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 534,288 words by 32 bits, fabricated with Ramsway’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high performance mem- ory system applications. |
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