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EM6111FS32AW-10S Datasheet(PDF) 9 Page - Emerging Memory & Logic Solutions Inc |
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EM6111FS32AW-10S Datasheet(HTML) 9 Page - Emerging Memory & Logic Solutions Inc |
9 / 11 page EM641FU16E Series Low Power, 256Kx16 SRAM 9 merging Memory & Logic Solutions Inc. merging Memory & Logic Solutions Inc. DATA RETENTION CHARACTERISTICS NOTES 1. See the ISB1 measurement condition of datasheet page 4. Parameter Symbol Test Condition Min Typ Max Unit VCC for Data Retention VDR ISB1 Test Condition (Chip Disabled) 1) 1.5 - 3.3 V Data Retention Current IDR VCC=1.5V, ISB1 Test Condition (Chip Disabled) 1) - 0.5 - µA Chip Deselect to Data Retention Time tSDR See data retention wave form 0 - - ns Operation Recovery Time tRDR tRC - - tSDR tRDR Data Retention Mode CS > Vcc-0.2V or LB= UB ≥ V CC-0.2V V cc 2.7V 2.2V V DR CS ,LB /UB GND DATA RETENTION WAVE FORM |
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