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EM632AFP16EW-85S Datasheet(PDF) 4 Page - Emerging Memory & Logic Solutions Inc

Part # EM632AFP16EW-85S
Description  256K x16 bit Low Power and Low Voltage Full CMOS Static RAM
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Manufacturer  EMLSI [Emerging Memory & Logic Solutions Inc]
Direct Link  http://www.emlsi.com
Logo EMLSI - Emerging Memory & Logic Solutions Inc

EM632AFP16EW-85S Datasheet(HTML) 4 Page - Emerging Memory & Logic Solutions Inc

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EM640FP16 Series
Low Power, 256Kx16 SRAM
4
DC AND OPERATING CHARACTERISTICS
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Input leakage current
ILI
VIN=VSS to VCC
-1
-
1
uA
Output leakage current
ILO
CS1=VIH, CS2=VIL or OE=VIH or WE=VIL or LB=UB=VIH
VIO=VSS to VCC
-1
-
1
uA
Operating power supply
ICC
IIO=0mA, CS1=VIL, CS2=WE=VIH, VIN=VIH or VIL
--
2
mA
Average operating current
ICC1
Cycle time=1
µs, 100% duty, I
LO=0mA,
CS1<0.2V, LB<0.2V or/and UB<0.2V, CS2>VCC-0.2V
VIN<0.2V or VIN>VCC-0.2V
--
2
mA
ICC2
Cycle time = Min, IIO=0mA, 100% duty,
CS1=VIL, CS2=VIH , LB=VIL or/and UB=VIL
VIN=VIL or VIH
--
15
mA
Output low voltage
VOL
IOL = 0.1mA
--
0.2
V
Output high voltage
VOH
IOH = -0.1mA
1.4
-
-
V
Standby Current (CMOS)
ISB1
CS1>VCC-0.2V, CS2>VCC-0.2V (CS1 controlled)
or 0V<CS2<0.2V (CS2 controlled),
Other inputs = 0 ~ VCC
(Typ. condition : VCC=1.8V @ 25
oC)
(Max. condition : VCC=2.2V @ 85
oC)
LL
LF
-1
5
uA
RECOMMENDED DC OPERATING CONDITIONS 1)
1. TA= -40 to 85oC, otherwise specified
2. Overshoot: VCC +1.0 V in case of pulse width < 20ns
3. Undershoot: -1.0 V in case of pulse width < 20ns
4. Overshoot and undershoot are sampled, not 100% tested
.
Parameter
Symbol
Min
Typ
Max
Unit
Supply voltage
VCC
1.65
1.8
2.2
V
Ground
VSS
00
0
V
Input high voltage
VIH
1.4
-
VCC + 0.3
2)
V
Input low voltage
VIL
-0.33)
-0.4
V
CAPACITANCE1) (f =1MHz, TA=25
oC)
1. Capacitance is sampled, not 100% tested
Item
Symbol
Test Condition
Min
Max
Unit
Input capacitance
CIN
VIN=0V
-8
pF
Input/Ouput capacitance
CIO
VIO=0V
-10
pF


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