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EM743FU16ES-55LF Datasheet(PDF) 8 Page - Emerging Memory & Logic Solutions Inc |
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EM743FU16ES-55LF Datasheet(HTML) 8 Page - Emerging Memory & Logic Solutions Inc |
8 / 10 page EM641FV8FT Series Low Power, 512Kx8 SRAM 8 merging Memory & Logic Solutions Inc. merging Memory & Logic Solutions Inc. DATA RETENTION CHARACTERISTICS NOTES 1. See the ISB1 measurement condition of datasheet page 4. 2. Typical values are measured at T A=25 oC and not 100% tested. Parameter Symbol Test Condition Min Typ2) Max Unit VCC for Data Retention VDR ISB1 Test Condition (Chip Disabled) 1) 1.5 - 3.6 V Data Retention Current IDR VCC=1.5V, ISB1 Test Condition (Chip Disabled) 1) - 0.5 - µA Chip Deselect to Data Retention Time tSDR See data retention wave form 0 - - ns Operation Recovery Time tRDR tRC - - tSDR tRDR Data Retention Mode CS > Vcc-0.2V V cc 2.7V 2.2V V DR CS GND DATA RETENTION WAVE FORM CS Controlled |
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