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EM6160FS32DT-12LF Datasheet(PDF) 9 Page - Emerging Memory & Logic Solutions Inc |
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EM6160FS32DT-12LF Datasheet(HTML) 9 Page - Emerging Memory & Logic Solutions Inc |
9 / 11 page EM620FV8AS Series Low Power, 256Kx8 SRAM 9 merging Memory & Logic Solutions Inc. merging Memory & Logic Solutions Inc. Rev 0.2 DATA RETENTION CHARACTERISTICS NOTES 1. See the ISB1 measurement condition of datasheet page 4 Parameter Symbol Test Condition Min Typ Max Unit VCC for Data Retention VDR ISB1 Test Condition (Chip Disabled) 1) 1.5 - 3.6 V Data Retention Current IDR VCC=1.5V, ISB1 Test Condition (Chip Disabled) 1) - - 5 µA Chip Deselect to Data Retention Time tSDR See data retention wave form 0 - - ns Operation Recovery Time tRDR tRC - - tSDR tRDR Data Retention Mode CS 1 > Vcc-0.2V V cc 2.7V 2.2V V DR CS 1 GND tSDR tRDR Data Retention Mode V cc 2.7V CS2 VDR 0.4V GND CS2 < 0.2V DATA RETENTION WAVE FORM CS1 Controlled CS2 Controlled |
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