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MM5451BV Datasheet(PDF) 3 Page - Micrel Semiconductor |
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MM5451BV Datasheet(HTML) 3 Page - Micrel Semiconductor |
3 / 6 page 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 -1 10 0 150℃ Notes : ※ 1. V GS = 0V 2. 250µ s Pulse Test 25℃ V SD, Source-Drain voltage [V] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 1.0 1.5 2.0 2.5 3.0 V GS = 4.5V V GS = 10V Note : T ※ J = 25℃ I D, Drain Current [A] 02468 10 10 -1 10 0 150 oC 25 oC -55 oC Notes : ※ 1. V DS = 10V 2. 250µ s Pulse Test V GS, Gate-Source Voltage [V] 10 0 10 1 10 0 V GS Top : 10.0 V 8.0 V 6.0 V 5.0 V 4.5 V 4.0 V 3.5 V Bottom : 3.0 V Notes : ※ 1. 250µ s Pulse Test 2. T C = 25℃ V DS, Drain-Source Voltage [V] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 12 V DS = 30V V DS = 48V Note : I ※ D = 200 mA Q G, Total Gate Charge [nC] 0 5 10 15 20 25 30 0 10 20 30 40 50 C rss C oss C iss Notes : ※ 1. V GS = 0V 2. f=1MHz C iss=Cgs+Cgd(Cds=shorted) C oss=Cds+Cgd C rss=Cgd V DS, Drain-Source Voltage [V] 3/6 Fig 3. On Resistance Variation vs. Drain Current and Gate Voltage Fig 4. On State Current vs. Allowable Case Temperature Fig 5. Capacitance Characteristics Fig 6. Gate Charge Characteristics 2N7000 Fig 1. On-State Characteristics Fig 2. Transfer Characteristics Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved. |
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