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EM710FV16CW-12LL Datasheet(PDF) 4 Page - Emerging Memory & Logic Solutions Inc |
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EM710FV16CW-12LL Datasheet(HTML) 4 Page - Emerging Memory & Logic Solutions Inc |
4 / 11 page EM640FP8 Series Low Power, 512Kx8 SRAM 4 merging Memory & Logic Solutions Inc. merging Memory & Logic Solutions Inc. DC AND OPERATING CHARACTERISTICS Parameter Symbol Test Conditions Min Typ Max Unit Input leakage current ILI VIN=VSS to VCC -1 - 1 µA Output leakage current ILO CS1=VIH, CS2=V IL or OE=V IH or WE=V IL, V IO=VSS to VCC -1 - 1 µA Operating power supply ICC IIO=0mA, CS 1=VIL, CS 2= WE=VIH, VIN=V IH or V IL - - 2 mA Average operating current ICC1 Cycle time=1 µs, 100% duty, I IO =0mA, CS 1<0.2V, CS2>V CC-0.2V, VIN<0.2V or VIN>VCC-0.2V - - 2 mA ICC2 Cycle time = Min, IIO=0mA, 100% duty, CS 1=VIL, CS 2=V IH, VIN=VIL or VIH 70ns - - 12 mA Output low voltage VOL IOL = 0.1mA - - 0.2 V Output high voltage VOH IOH = -0.1mA 1.4 - - V Standby Current (CMOS) ISB1 CS1>VCC -0.2V, CS 2>VCC-0.2V (CS1 controlled) or 0V< CS2<0.2V (CS 2 controlled), Other inputs=0 ~ VCC (Typ. condition : VCC=1.8V @ 25 oC) (Max. condition : VCC =2.2V @ 85 oC) LL LF - 1 5 µA RECOMMENDED DC OPERATING CONDITIONS 1) 1. TA= -40 to 85oC, otherwise specified 2. Overshoot: VCC +1.0 V in case of pulse width < 20ns 3. Undershoot: -1.0 V in case of pulse width < 20ns 4. Overshoot and undershoot are sampled, not 100% tested . Parameter Symbol Min Typ Max Unit Supply voltage VCC 1.65 1.8 2.2 V Ground VSS 0 0 0 V Input high voltage VIH 1.4 - VCC + 0.3 2) V Input low voltage V IL -0.33) - 0.4 V CAPACITANCE1) (f =1MHz, TA=25 oC) 1. Capacitance is sampled, not 100% tested Item Symbol Test Condition Min Max Unit Input capacitance C IN V IN=0V - 8 pF Input/Ouput capacitance C IO V IO =0V - 10 pF |
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