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EM6165FV8ES-45LF Datasheet(PDF) 4 Page - Emerging Memory & Logic Solutions Inc |
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EM6165FV8ES-45LF Datasheet(HTML) 4 Page - Emerging Memory & Logic Solutions Inc |
4 / 10 page EM641FV8FT Series Low Power, 512Kx8 SRAM 4 merging Memory & Logic Solutions Inc. merging Memory & Logic Solutions Inc. RECOMMENDED DC OPERATING CONDITIONS 1) 1. TA= -40 to 85oC, otherwise specified 2. Overshoot: VCC +2.0 V in case of pulse width < 20ns 3. Undershoot: -2.0 V in case of pulse width < 20ns 4. Overshoot and undershoot are sampled, not 100% tested . Parameter Symbol Min Typ Max Unit Supply voltage VCC 2.7 3.3 3.6 V Ground VSS 0 0 0 V Input high voltage V IH 2.2 - VCC + 0.2 2) V Input low voltage VIL -0.23) - 0.6 V CAPACITANCE1) (f =1MHz, TA=25 oC) 1. Capacitance is sampled, not 100% tested Item Symbol Test Condition Min Max Unit Input capacitance C IN V IN=0V - 8 pF Input/Ouput capacitance C IO V IO =0V - 10 pF DC AND OPERATING CHARACTERISTICS NOTES 1. Typical values are measured at Vcc=3.3V, T A=25 oC and not 100% tested. Parameter Symbol Test Conditions Min Typ Max Unit Input leakage current ILI V IN=V SS to VCC -1 - 1 µA Output leakage current ILO CS=VIH or OE =VIH or WE=V IL, VIO=VSS to VCC -1 - 1 µA Operating power supply ICC I IO=0mA, CS =VIL, VIN=VIH or VIL - - 3 mA Average operating current ICC1 Cycle time=1 µs, 100% duty, I IO=0mA, CS<0.2V, V IN<0.2V or VIN> VCC-0.2V - - 3 mA ICC2 Cycle time = Min, IIO=0mA, 100% duty, CS=VIL , VIN=V IL or VIH 55ns - - 25 mA 70ns - - 20 Output low voltage VOL I OL = 2.1mA - - 0.4 V Output high voltage VOH I OH = -1.0mA 2.4 - - V Standby Current (TTL) ISB CS=VIH, Other inputs=VIH or VIL - - 0.3 mA Standby Current (CMOS) ISB1 CS>VCC -0.2V, Other inputs=0~VCC (Typ. condition : V CC=3.3V @ 25 oC) (Max. condition : VCC=3.6V @ 85 oC) LL LF - 1 1) 12 µA |
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