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EM632AFU8EW-85LF Datasheet(PDF) 5 Page - Emerging Memory & Logic Solutions Inc |
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EM632AFU8EW-85LF Datasheet(HTML) 5 Page - Emerging Memory & Logic Solutions Inc |
5 / 11 page EM640FP16 Series Low Power, 256Kx16 SRAM 5 Parameter Symbol 70ns Unit Min Max Read Cycle Time tRC 70 - ns Address Access Time tAA -70 ns Chip Select to output tco1, tco2 -70 ns Output Enable to valid output tOE -35 ns UB, LB Acess time tBA 70 ns Chip select to low-Z output tLZ1, tLZ2 10 - ns UB, LB enable to low-Z output tBLZ 10 - ns Output Enable to Low-Z output tOLZ 5- ns Chip disable to high-Z output tHZ1, tHZ2 025 ns UB, LB disable to high-Z output tBHZ 025 ns Output disable to high-Z output tOHZ 025 ns Output hold from address change tOH 10 - ns Parameter Symbol 70ns Unit Min Max Write Cycle Time tWC 70 - ns Chip Select to end of write tCW1, tCW2 60 - ns Address Setup time tAs 0- ns Address valid to end of write tAW 60 - ns UB, LB valid to end of write tBW 60 - ns Write pulse width tWP 55 - ns Write recovery time tWR 0- ns Write to ouput high-Z tWHZ 025 ns Data to write time overlap tDW 30 ns Data hold from write time tDH 0- ns End write to output low-Z tOW 5- ns READ CYCLE (Vcc =1.65 to 2.2V, Gnd = 0V, TA = -40 oC to +85oC) WRITE CYCLE (Vcc =1.65 to 2.2V, Gnd = 0V, TA = -40 oC to +85oC) AC OPERATING CONDITIONS Test Conditions (Test Load and Test Input/Output Reference) Input Pulse Level : 0.2 to VCC-0.2V Input Rise and Fall Time : 5ns Input and Output reference Voltage : 0.9V Output Load (See right) : CL = 100pF+ 1 TTL CL1) = 30pF + 1 TTL 1. Including scope and Jig capacitance 2. R1=3070 ohm, R2=3150 ohm 3. VTM=1.8V CL1) VTM 3) R1 2) R2 2) |
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