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MIC44F20YML Datasheet(PDF) 11 Page - Micrel Semiconductor |
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MIC44F20YML Datasheet(HTML) 11 Page - Micrel Semiconductor |
11 / 13 page Micrel, Inc. MIC44F18/19/20 January 2007 11 M9999-011207 FET G G ON ON DRIVER drive R R R R P Pdiss _ + + = Supply Current Power Dissipation Power is dissipated in the MIC44F18 even if is there is nothing being driven. The supply current is drawn by the bias for the internal circuitry, the level shifting circuitry and shoot-through current in the output drivers. The supply current is proportional to operating frequency and the VDD voltage. The typical characteristic graphs show how supply current varies with switching frequency and supply voltage. The power dissipated by the MIC44F18 due to supply current is DD DD SUPPLY I V Pdiss × = Total Power Dissipation and Thermal Considerations Total power dissipation in the Driver equals the power dissipation caused by driving the external MOSFETs plus the supply current. DRIVE SUPPLY TOTAL Pdiss Pdiss Pdiss + = The die temperature may be calculated once the total power dissipation is known. JA TOTAL A J Pdiss T T θ × + = Where TA is the Maximum ambient temperature TJ is the junction temperature (°C) PdissTOTAL is the power dissipation of the Driver θJC is the thermal resistance from junction-to- ambient air (°C/W) The following graphs help determine the maximum gate charge that can be driven with respect to switching frequency, supply voltage and ambient temperature. Figure 6A shows the power dissipation in the driver for different values of gate charge with VDD=5V. Figure 6B shows the power dissipation at VDD=12V. Figure 6C show the maximum power dissipation for a given ambient temperature for the MLF and ePad packages. The maximum operating frequency of the driver may be limited by the maximum power dissipation of the driver package. Figure 6A. Driver Power Dissipation Figure 6B. Driver Power Dissipation Figure 6C. Max. Driver Power Dissipation |
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