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STP14NF10 Datasheet(PDF) 1 Page - STMicroelectronics |
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STP14NF10 Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 11 page 1/11 June 2002 . STB14NF10 STP14NF10 STP14NF10FP N-CHANNEL 100V - 0.115 Ω - 15A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STripFET™ II POWER MOSFET s TYPICAL RDS(on) = 0.115 Ω s EXCEPTIONAL dv/dt CAPABILITY s 100% AVALANCHE TESTED s APPLICATION ORIENTED CHARACTERIZATION s SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX “T4”) DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been de- signed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high- efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements. APPLICATIONS s HIGH-EFFICIENCY DC-DC CONVERTERS s UPS AND MOTOR CONTROL TYPE VDSS RDS(on) ID STB14NF10 STP14NF10 STP14NF10FP 100 V 100 V 100 V <0.13 Ω <0.13 Ω <0.13 Ω 15 A 15 A 10 A TO-220 1 2 3 TO-220FP 1 3 D2PAK TO-263 (Suffix “T4”) 1 2 3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS ( •) Pulse width limited by safe operating area. (1) ISD ≤14A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX (2) Starting Tj = 25 oC, ID = 15A, VDD= 50V Symbol Parameter Value Unit STB14NF10 STP14NF10 STP14NF10FP VDS Drain-source Voltage (VGS = 0) 100 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 100 V VGS Gate- source Voltage ± 20 V ID Drain Current (continuous) at TC = 25°C 15 10 A ID Drain Current (continuous) at TC = 100°C 10 6.3 A IDM(•) Drain Current (pulsed) 60 40 A Ptot Total Dissipation at TC = 25°C 60 25 W Derating Factor 0.4 0.17 W/°C dv/dt (1) Peak Diode Recovery voltage slope 9 V/ns EAS (2) Single Pulse Avalanche Energy 70 mJ VISO Insulation Withstand Voltage (DC) ------ 2000 V Tstg Storage Temperature -55 to 175 °C Tj Operating Junction Temperature |
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