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EM644FU8BT-10S Datasheet(PDF) 8 Page - Emerging Memory & Logic Solutions Inc

Part # EM644FU8BT-10S
Description  128K x16 bit Low Power and Low Voltage Full CMOS Static RAM
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Manufacturer  EMLSI [Emerging Memory & Logic Solutions Inc]
Direct Link  http://www.emlsi.com
Logo EMLSI - Emerging Memory & Logic Solutions Inc

EM644FU8BT-10S Datasheet(HTML) 8 Page - Emerging Memory & Logic Solutions Inc

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EM620FU16B Series
Low Power, 128Kx16 SRAM
8
tWC
Address
CS1
UB,LB
WE
Data in
Data out
tCW1,2(2)
tWR(4)
tAW
tBW
tWP(1)
tDW
tDH
TIMING WAVEFORM OF WRITE CYCLE(3) (CS2 CONTROLLED)
High-Z
High-Z
Data Valid
tAS(3)
NOTES (WRITE CYCLE)
1. A write occurs during the overlap(tWP) of low CS1, a high CS2 and low WE. A write begins at the latest
transition among CS1 goes low, CS2 goes high and WE goes low. A write ends at the earliest transition
among CS1 goes low, CS2 goes high and WE goes high. The tWP is measured from the beginning of write
to the end of write.
2. tCW is measured from the CS1 going low CS2 going high to end of write.
3. tAS is measured from the address valid to the beginning of write.
4. tWR is measured from the end or write to the address change. tWR applied in case a write ends as CS1
or WE going high or CS2 going low.
CS2
tAS(3)


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