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EM610V16BW-12L Datasheet(PDF) 2 Page - Emerging Memory & Logic Solutions Inc |
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EM610V16BW-12L Datasheet(HTML) 2 Page - Emerging Memory & Logic Solutions Inc |
2 / 11 page EM611FV16U Series Low Power, 64Kx16 SRAM 2 merging Memory & Logic Solutions Inc. merging Memory & Logic Solutions Inc. FEATURES • Process Technology : 0.18 µm Full CMOS • Organization : 64K x 16 bit • Power Supply Voltage : 2.7V ~ 3.6V • Low Data Retention Voltage : 1.5V(Min.) • Three state output and TTL Compatible • Package Type : 44-TSOP2 GENERAL DESCRIPTION The EM611FV16U families are fabricated by EMLSI’s advanced full CMOS process technology. The families support industrial temperature range and Chip Scale Package for user flexibility of system design. The fami- lies also supports low data retention voltage for battery back-up operation with low data retention current. 2. Typical values are measured at Vcc=3.3V, T A =25 oC and not 100% tested. PRODUCT FAMILY Product Family Operating Temperature Vcc Range Speed Power Dissipation PKG Type Standby (ISB1, Typ.) Operating (ICC1.Max.) EM611FV16U Industrial (-40 ~ 85 oC) 2.7V~3.6V 55 1) /70ns 0.5 µA2) 3 mA 44 TSOP2 1. The parameter is measured with 30pF test load. Name Function Name Function CS Chip select input Vcc Power Supply OE Output Enable input Vss Ground WE Write Enable input UB Upper Byte (I/O9~16) A0~A15 Address Inputs LB Lower Byte (I/O1~8) I/O1~I/O16 Data Inputs/outputs NC No Connection I/O Circuit Column Select Data Cont Data Cont Pre-charge Circuit Memory Array 1024 x 1024 A1 A2 A3 A4 A5 A6 A7 A0 A8 A9 A10 A11 A12 A13 A14 A15 WE OE UB LB CS I/O1 ~ I/O8 I/O9 ~ I/O16 VCC VSS Control Logic FUNCTIONAL BLOCK DIAGRAM PIN DESCRIPTION 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 A4 A3 A2 A1 A0 CS I/O1 I/O2 I/O3 I/O4 VCC VSS I/O5 I/O6 I/O7 I/O8 A5 A6 A7 OE UB LB I/O16 I/O15 I/O14 I/O13 VSS VCC I/O12 I/O11 I/O10 I/O9 44 - TSOP2 17 18 19 20 21 22 28 27 26 25 24 23 WE A15 A14 A13 A12 NC NC A8 A9 A10 A11 NC |
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