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| EM620FU16B |
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 EMLSI
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4 page 
EM620FU16B Series Low Power, 128Kx16 SRAM 4 DC AND OPERATING CHARACTERISTICS NOTES 1. Typical values are measured at Vcc=3.0V, TA=25oC and not 100% tested. Parameter Symbol Test Conditions Min Typ Max Unit Input leakage current ILI VIN=VSS to VCC -1 - 1 uA Output leakage current ILO CS1=VIH or CS2=VIL or OE=VIH or WE=VIL or LB=UB=VIH VIO=VSS to VCC -1 - 1 uA Operating power supply ICC IIO=0mA, CS1=VIL, CS2=WE=VIH, VIN=VIH or VIL -- 3 mA Average operating current ICC1 Cycle time=1 µs, 100% duty, IIO=0mA, CS1<0.2V, CS2>VCC-0.2V, VIN<0.2V or VIN>VCC-0.2V -- 3 mA ICC2 Cycle time = Min, IIO=0mA, 100% duty, CS1=VIL, CS2=VIH, VIN=VIL or VIH 45ns - - 35 mA 55ns - - 30 70ns - - 25 Output low voltage VOL IOL = 2.1mA -- 0.4 V Output high voltage VOH IOH = -1.0mA 2.4 - - V Standby Current (TTL) ISB CS1=VIH, CS2=VIL, Other inputs=VIH or VIL -- 0.3 mA Standby Current (CMOS) ISB1 CS1>VCC-0.2V, CS2>VCC-0.2V (CS1 controlled) or 0V<CS2<0.2V (CS2 controlled), Other inputs = 0~VCC (Typ. condition : VCC=3.0V @ 25 oC) (Max. condition : VCC=3.3V @ 85 oC) LF - 11) 10 uA RECOMMENDED DC OPERATING CONDITIONS 1) 1. TA= -40 to 85oC, otherwise specified 2. Overshoot: VCC +2.0 V in case of pulse width < 20ns 3. Undershoot: -2.0 V in case of pulse width < 20ns 4. Overshoot and undershoot are sampled, not 100% tested . Parameter Symbol Min Typ Max Unit Supply voltage VCC 2.7 3.0 3.3 V Ground VSS 00 0 V Input high voltage VIH 2.0 - VCC + 0.22) V Input low voltage VIL -0.23) -0.6 V CAPACITANCE1) (f =1MHz, TA=25oC) 1. Capacitance is sampled, not 100% tested. Item Symbol Test Condition Min Max Unit Input capacitance CIN VIN=0V - 8 pF Input/Ouput capacitance CIO VIO=0V - 10 pF |
