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MMBT2222A Datasheet(PDF) 2 Page - TAITRON Components Incorporated |
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MMBT2222A Datasheet(HTML) 2 Page - TAITRON Components Incorporated |
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2 / 3 page  Rev. A/AH 2007-11-13 MMBT2222A SMD General Purpose Transistor (NPN) www.taitroncomponents.com Page 2 of 3 Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Symbol Description Min. Max. Unit Conditions 35 - VCE=10V, IC=0.1mA 50 - VCE=10V, IC=1mA 75 - VCE=10V, IC=10mA 35 - VCE=10V, IC=10mA Ta=-55° C 100 300 VCE=10V, IC=150mA * 40 - VCE=10V, IC=500mA * hFE D.C. Current Gain 50 - VCE=1.0V, IC=150mA * V(BR)CBO Collector-Base Breakdown Voltage 75 - V IC=10µA, IE=0 V(BR)CEO Collector-Emitter Breakdown Voltage * 40 - V IC=10mA, IB=0 V(BR)EBO Emitter-Base Breakdown Voltage 6.0 - V IE=10µA, IC=0 - 0.3 IC=150mA, IB=15mA VCEsat Collector-Emitter Saturation Voltage * - 1.0 V IC=500mA, IB=50mA 0.6 1.2 IC=150mA, IB=15mA VBEsat Base-Emitter Saturation Voltage * - 2.0 V IC=500mA, IB=50mA ICEX Collector Cut-off Current - 10 nA VEB=3V, VCE=60V 10 nA VCB=60V, IE=0 ICBO Collector Cut-off Current - 10 µA VCB=60V, IE=0, Ta=125° C IBL Base Cut-off Current - 20 nA VEB=3V, VCE=60V IEBO Emitter Cut-off Current - 10 nA VEB=3V, IC=0 fT Current Gain-Bandwidth Product 300 - MHz VCE=20V, IC=20mA, f=100MHz Cobo Output Capacitance - 8.0 pF VCB=10V, f=1.0MHz, IE=0 Cibo Input Capacitance - 25 pF VEB=0.5V, f=1.0MHz, IC=0 NF Noise Figure - 4.0 dB VCE=10V, IC=100µA, Rs=1kΩ, f=1kHz rb’Cc Collector Base Time Constant - 150 ps VCB=20V, IC=20mA, f=31.8 MHz td Delay Time - 10 tr Rise Time - 25 IB1=15mA IC=150mA VCC=30V VEB=0.5V ts Storage Time - 225 tf Fall Time - 60 ns IB1=IB2=15mA IC=150mA VCC=30V *Pulse Test Pulse Width ≤ 300µs, Duty Cycle ≤2.0% |
Similar Part No. - MMBT2222A |
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Similar Description - MMBT2222A |
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