1 page
FEATURES
DESCRIPTION
APPLICATIONS
• Low noise
• Blue enhanced
• High shunt resistance
• High response
SYMBOL
PARAMETER
MIN
MAX
UNITS
VBR
Reverse Voltage
75
V
TSTG
Storage Temperature
-40
+100
°C
TO
Operating Temperature
-40
+90
°C
TS
Soldering Temperature*
+240
°C
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ISC
Short Circuit Current
H = 100 fc, 2850 K
90
110
μA
ID
Dark Current
VR = 10V
5
30
nA
RSH
Shunt Resistance
VR = 10 mV
100
250
MΩ
CJ
Junction Capacitance
VR =10 V, f = 1 MHz
60
pF
lrange
Spectral Application Range
Spot Scan
350
1100
nm
R
Responsivity
l= 450 nm V, VR = 0 V
0.15
0.18
A/W
VBR
Breakdown Voltage
I = 10 μA
75
100
V
NEP
Noise Equivalent Power
VR = 0V @ l=950nm
9x10
-14
W/ √ Hz
RL = 50 Ω,VR = 0 V
190
tr
Response Time**
RL = 50 Ω,VR = 10 V
13
nS
SPECTRAL RESPONSE
0.00
0.10
0.20
0.30
0.40
0.50
0.60
0.70
Wavelength (nm)
Blue Enhanced Photoconductive Silicon Photodiode
PDB-C113
PACKAGE DIMENSIONS INCH [mm]
CERAMIC PACKAGE
The PDB-C113 is a blue enhanced PIN silicon
photodiode in a photoconductive mode, packaged in
a ceramic package.
• Instrumentation
• Industrial
• Medical
* 1/16 inch from case for 3 seconds max.
ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED
**Response time of 10% to 90% is specified at 660nm wavelength light.
Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are
subject to change without notice.
Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com
ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED
CHIP DIMENSIONS INCH [mm]
PACKAGE DIMENSIONS INCH [mm]
CHIP DIMENSIONS INCH [mm]
CERAMIC PACKAGE
.113 [2.87] SQUARE
ACTIVE AREA
.125 [3.18] SQUARE
.224 [5.69]
Ø.265 [6.73]
120°
VIEWING
ANGLE
.070 [1.78]
.085 [2.16]
.200 [5.08]
2X Ø.020 [0.51]
ANODE
CATHODE
2X 1.50 [38.1] MIN
RED DOT
INDICATES
ANODE
